Single-Electron Tunneling through Molecular Quantum Dots in a Metal-Insulator-Semiconductor Structure-Reference-Cited by-同舟云学术

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Single-Electron Tunneling through Molecular Quantum Dots in a Metal-Insulator-Semiconductor Structure

Published:2011-05-24 Issue:15 Volume:21 Page:2933-2937
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Hayakawa Ryoma,Hiroshiba Nobuya,Chikyow Toyohiro,Wakayama Yutaka

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201100220/fullpdf

Reference30 articles.

1. Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device

2. Coulomb blockade and the Kondo effect in single-atom transistors

3. Electronically Configurable Molecular-Based Logic Gates

4. Metal-nanoparticle single-electron transistors fabricated using electromigration

5. Room-temperature Coulomb blockade from a self-assembled molecular nanostructure

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