Low-Voltage, Optoelectronic CH3 NH3 PbI3− x Cl x Memory with Integrated Sensing and Logic Operations-Reference-Cited by-同舟云学术

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Low-Voltage, Optoelectronic CH3 NH3 PbI3− x Cl x Memory with Integrated Sensing and Logic Operations

Published:2018-02-12 Issue:15 Volume:28 Page:1800080
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhou Feichi¹,Liu Yanghui¹,Shen Xinpeng¹,Wang Mengye¹,Yuan Fang¹,Chai Yang¹^ORCID

Affiliation:

1. Department of Applied Physics; The Hong Kong Polytechnic University; Hung Hom Kowloon 999077 Hong Kong P. R. China

Funder

Research Grants Council, University Grants Committee

Hong Kong Polytechnic University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories

2. A Versatile Light-Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3

3. A Light-Controlled Resistive Switching Memory

4. Monolayer optical memory cells based on artificial trap-mediated charge storage and release

5. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

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