Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors-Reference-Cited by-同舟云学术

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Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors

Published:2010-11-15 Issue:1 Volume:21 Page:100-107
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Andringa Anne-Marije,Meijboom Juliaan R.,Smits Edsger C. P.,Mathijssen Simon G. J.,Blom Paul W. M.,de Leeuw Dago M.

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201001560/fullpdf

Reference53 articles.

1. Metal oxide-based gas sensor research: How to?

2. Metal oxide semiconductor NO2 sensor

3. The prediction of bacteria type and culture growth phase by an electronic nose with a multi-layer perceptron network

4. MOS–MOSFET gas sensors array measurements versus sensory and chemical characterisation of VOC’s emissions from car seat foams

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