Continuous Control and Enhancement of Excitonic Valley Polarization in Monolayer WSe 2 by Electrostatic Doping-Reference-Cited by-同舟云学术

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Continuous Control and Enhancement of Excitonic Valley Polarization in Monolayer WSe 2 by Electrostatic Doping

Published:2019-04-26 Issue:26 Volume:29 Page:1900260
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Shinokita Keisuke¹^ORCID,Wang Xiaofan¹,Miyauchi Yuhei¹^ORCID,Watanabe Kenji²^ORCID,Taniguchi Takashi²^ORCID,Matsuda Kazunari¹

Affiliation:

1. Institute of Advanced EnergyKyoto University Kyoto 611‐0011 Japan

2. National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Funder

Japan Society for the Promotion of Science

Asahi Glass Foundation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201900260

Reference65 articles.

1. Quantized conductance in an AlAs two-dimensional electron system quantum point contact

2. Valley filter and valley valve in graphene

3. Valley-contrasting physics in all-dielectric photonic crystals: Orbital angular momentum and topological propagation

4. Valley-dependent optoelectronics from inversion symmetry breaking

5. Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

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1. Photo- and exchange-field controlled spin and valley polarized transport in a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides;Journal of Physics D: Applied Physics;2024-09-06

2. Nonvolatile Control of Valley Polarized Emission in 2D WSe₂-AlScN Heterostructures;ACS Nano;2024-06-26

3. Tuning the valley depolarization dynamics in selenium and vanadium alloyed monolayer MoS2;Physical Review Materials;2024-06-24

4. Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers;npj 2D Materials and Applications;2024-03-20

5. Realization of the Tunable Multivalley System in a GeSe Monolayer by Atomic Substitution;ACS Applied Electronic Materials;2024-03-05

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