Schottky-Barrier-Controllable Graphene Electrode to Boost Rectification in Organic Vertical P-N Junction Photodiodes-Reference-Cited by-同舟云学术

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Schottky-Barrier-Controllable Graphene Electrode to Boost Rectification in Organic Vertical P-N Junction Photodiodes

Published:2017-11-02 Issue:48 Volume:27 Page:1704475
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Jong Su¹,Choi Young Jin¹,Woo Hwi Je¹,Yang Jeehye²,Song Young Jae¹³,Kang Moon Sung²,Cho Jeong Ho¹⁴

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT); Sungkyunkwan University; Suwon 440-746 South Korea

2. Department of Chemical Engineering; Soongsil University; Seoul 156-743 South Korea

3. Department of Physics; Sungkyunkwan University; Suwon 440-746 South Korea

4. School of Chemical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

Funder

Center for Advanced Soft Electronics

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

3. Graphene: Status and Prospects

4. The electronic properties of graphene

5. High-frequency, scaled graphene transistors on diamond-like carbon

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