Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fe x (C 60 ) 1− x Granular Films Near the Metal‐Insulator Transition-Reference-Cited by-同舟云学术

Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fe x (C 60 ) 1− x Granular Films Near the Metal‐Insulator Transition

Published:2019-06-24 Issue:36 Volume:29 Page:1808747
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zheng Lingcheng¹,He Zhihao²,Zhang Rui¹,Qu Jiangtao³,Feng Deqiang¹,He Jie¹,Chen Hansheng³,Yun Fan³,Cheng Yahui¹³^ORCID,Li Zhiqing²,Liu Hui¹,Zhang Xixiang⁴,Zheng Rongkun³

Affiliation:

1. Department of Electronics and Key Laboratory of Photo‐Electronic Thin Film Devices and Technology of Tianjin Nankai University Tianjin 300350 China

2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology Department of Physics Tianjin University Tianjin 300072 China

3. School of Physics The University of Sydney NSW 2006 Australia

4. Physical Science and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Australian Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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