Revisiting Metal Sulfide Semiconductors: A Solution-Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects-Reference-Cited by-同舟云学术

Revisiting Metal Sulfide Semiconductors: A Solution-Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

Published:2015-08-14 Issue:36 Volume:25 Page:5739-5747
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Shinde Dipak V.¹,Patil Supriya A.¹,Cho Keumnam¹,Ahn Do Young¹,Shrestha Nabeen K.¹,Mane Rajaram S.²,Lee Joong Kee³,Han Sung-Hwan¹

Affiliation:

1. Department of Chemistry; Hanyang University; Seoul 133-791 Republic of Korea

2. School of Physical Sciences; Swami Ramanand Teerth Marathwada University; Nanded-431 606 India

3. Energy Storage Research Center; Korea Institute of Science and Technology; Seoul 136-791 Republic of Korea

Funder

Ministry of Education

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference65 articles.

1. Influence of Selective Nucleation on the One Step Chemical Bath Deposition of CdS/ZnO and CdS/ZnS Composite Films

2. High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

3. Hybrid passivated colloidal quantum dot solids

4. A general method for the large-scale synthesis of uniform ultrathin metal sulphide nanocrystals

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