[cis-(1,3-Diene)2W(CO)2] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten - Tungsten Carbide Films-Reference-Cited by-同舟云学术

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[cis-(1,3-Diene)2W(CO)2] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten - Tungsten Carbide Films

Published:2010-08-27 Issue:7-9 Volume:16 Page:239-247
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Jipa Ilona,Heinemann Frank W.,Schneider Andreas,Popovska Nadejda,Siddiqi M. Aslam,Siddiqui Rehan A.,Atakan Burak,Marbach Hubertus,Papp Christian,Steinrück Hans-Peter,Zenneck Ulrich

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference49 articles.

1. On the structure, stress and optical properties of CVD tungsten oxide films

2. Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)

3. XPS and XRD study of the electrochromic mechanism of WOx films

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tungsten Carbides;Ultra-High Temperature Materials IV;2022

2. Thermal atomic layer deposition of tungsten carbide films from WCl6 and AlMe3;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-01

3. Pt-WxC nano-composites as an efficient electrochemical catalyst for oxygen reduction reaction;Nano Energy;2013-01

4. Metals – Gas-Phase Deposition and Applications;Comprehensive Inorganic Chemistry II;2013

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