Unraveling bulk defects in high-quality c-Si material via TIDLS
Author:
Affiliation:
1. Arizona State University; Tempe AZ 85281 USA
2. Sinton Instruments; Boulder CO 80301 USA
3. Energy Research Centre of the Netherlands; Petten 1755 LE The Netherlands
4. The University of New South Wales; Sydney 2052 NSW Australia
Funder
Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference33 articles.
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3. Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence;Macdonald;Journal of Applied Physics,2008
4. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004
5. Cobalt related defect levels in silicon analyzed by temperature- and injection-dependent lifetime spectroscopy;Diez;Journal of Applied Physics,2007
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