Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O-Reference-Cited by-同舟云学术

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O

Published:2018-06-05 Issue:38 Volume:24 Page:9525-9529
ISSN:0947-6539
Container-title:Chemistry – A European Journal
language:en
Short-container-title:Chem. Eur. J.

Author:

Kim Sang Bok¹^ORCID,Jayaraman Ashwin¹^ORCID,Chua Danny¹^ORCID,Davis Luke M.¹^ORCID,Zheng Shao‐Liang¹^ORCID,Zhao Xizhu¹^ORCID,Lee Sunghwan²^ORCID,Gordon Roy G.¹^ORCID

Affiliation:

1. Department of Chemistry and Chemical Biology Harvard University 12 Oxford Street Cambridge MA 02138 USA

2. Department of Mechanical Engineering Baylor University One Bear Place #97536 Waco TX 76798-7356 USA

Funder

U.S. Department of Energy

National Science Foundation

Publisher

Wiley

Subject

General Chemistry,Catalysis,Organic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/chem.201802317

Reference44 articles.

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4. Improved Chemically Deposited Zn(O,S) Buffers for Cu(In,Ga)(S,Se)₂ Solar Cells by Controlled Incorporation of Indium

5. Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

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