Low-Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Reference20 articles.
1. Nano on nano
2. Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix
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5. Selective Ge deposition on Si using thermal decomposition of GeH4
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1. Nanotechnology: Plasma-Based;Encyclopedia of Plasma Technology;2016-12-12
2. Plasma–surface interactions at nanoscales: a combinatorial theoretical, process diagnostics and surface microanalysis approach;Journal of Physics D: Applied Physics;2014-05-14
3. Quantum confinement in Si and Ge nanostructures: Theory and experiment;Applied Physics Reviews;2014-03
4. Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids;Advances in Physics;2013-04
5. Plasma Synthesis of Quantum Dots;Nanoscience and Nanotechnology Letters;2013-03-01
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