Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition

Author:

Adelmann C.,Lehnen P.,Van Elshocht S.,Zhao C.,Brijs B.,Franquet A.,Conard T.,Roeckerath M.,Schubert J.,Boissière O.,Lohe C.,De Gendt S.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference33 articles.

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3. Materials Fundamentals of Gate Dielectrics (Eds: A. A. Demkov, A. Navrotsky), Springer, Dordrecht, 2005.

4. High Dielectric Constant Materials: VLSI MOSFET Applications (Eds: H. R. Huff, D. C. Gilmer), Springer, Berlin, 2005.

5. Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

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