Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Some recent developments in the chemical vapour deposition of electroceramic oxides
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