Imaging Dielectric Breakdown in Valence Change Memory-Reference-Cited by-同舟云学术

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Imaging Dielectric Breakdown in Valence Change Memory

Published:2021-09-30 Issue:2 Volume:32 Page:2102313
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Hubbard William A.¹²^ORCID,Lodico Jared J.¹²,Chan Ho Leung¹²,Mecklenburg Matthew³,Regan Brian C.¹²

Affiliation:

1. Department of Physics and Astronomy University of California Los Angeles CA 90095 USA

2. California NanoSystems Institute University of California Los Angeles CA 90095 USA

3. Core Center of Excellence in Nano Imaging University of Southern California Los Angeles CA 90089 USA

Funder

University of California, Los Angeles

Division of Materials Research

Semiconductor Research Corporation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202102313

Reference50 articles.

1. A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

2. International Roadmap for Devices and Systems Technical Report 2020 IEEE 2020 https://irds.ieee.org/(accessed: November 2020).

3. A.Padovani L.Larcher P.Padovani C.Cagli B. D.Salvo in2012 4th IEEE International Memory Workshop 2012 pp. 1–4.

4. Recommended Methods to Study Resistive Switching Devices

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