Affiliation:
1. State Key Laboratory of Silicon and Advanced Semiconductor Materials International Research Center for X Polymers Department of Polymer Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
2. Zhejiang University–Hangzhou Global Scientific and Technological Innovation Center Hangzhou 310014 P. R. China
Abstract
Abstract2D/3D‐structured perovskites are promising for high‐performance and stable solar cells due to the passivation ability and hydrophobic character of the large organic cations. However, most of the 2D/3D‐structured perovskites prepared by adding ammonium halides into the precursors or depositing ammonium halides on top of a 3D perovskite film ignore the buried interface which is crucial for the device efficiency and stability. Here, 2D/3D/2D‐structured perovskite films with optimized buried interface are constructed by depositing phenethylammonium bromide (PEABr) on top and 2D perovskite PEA2FA2Pb3Br10 at the bottom of 3D Cs0.07FA0.85MA0.08Pb(I0.95Br0.05)3 perovskite. Thus, a power conversion efficiency (PCE) of 24.2% is achieved due to the minimal nonradiative recombination. The encapsulated device also shows an improved stability, maintaining 93.5% of the initial value after 1000 h under 1 sun equivalent illumination at the maximum power point. This strategy may provide important insights into designing perovskite film structures to achieve high‐performance solar cells with high stability.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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