Electrostatic Coupling in MoS 2 /CuInP 2 S 6 Ferroelectric vdW Heterostructures-Reference-Cited by-同舟云学术

Electrostatic Coupling in MoS ₂ /CuInP ₂ S ₆ Ferroelectric vdW Heterostructures

Published:2022-04-26 Issue:29 Volume:32 Page:2201359
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Li Ping¹,Chaturvedi Apoorva²,Zhou Hailin¹,Zhang Gaojun³,Li Qiankun¹,Xue Jinshuo¹,Zhou Ziwen¹,Wang Shun¹,Zhou Kun¹,Weng Yuyan¹,Zheng Fengang¹,Shi Zhenwu³,Teo Edwin Hang Tong²⁴,Fang Liang¹,You Lu¹^ORCID

Affiliation:

1. School of Physical Science and Technology Jiangsu Key Laboratory of Thin Films Soochow University Suzhou 215006 China

2. School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore

3. School of Optoelectronic Science and Engineering Soochow University Suzhou 215006 China

4. School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202201359

Reference56 articles.

1. Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

2. Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

3. Ferroelectric-Gated Two-Dimensional-Material-Based Electron Devices

4. Empowering 2D nanoelectronics via ferroelectricity

5. Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

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