Affiliation:
1. Department of Materials Science and Metallurgy University of Cambridge Cambridge CB3 0FS UK
2. Department of Electrical and Computer Engineering University of Southern California Los Angeles 90089 USA
3. Samsung Advanced Institute of Technology Suwon‐si 16678 South Korea
4. Department of Electronics Engineering Jeonbuk National University Jeonju‐si 54896 South Korea
Abstract
AbstractFerroelectric materials offer a low‐energy, high‐speed alternative to conventional logic and memory circuitry. Hafnia‐based films have achieved single‐digit nm ferroelectricity, enabling further device miniaturization. However, they can exhibit nonideal behavior, specifically wake‐up and fatigue effects, leading to unpredictable performance variation over consecutive electronic switching cycles, preventing large‐scale commercialization. The origins are still under debate. Using plasmon‐enhanced spectroscopy, a non‐destructive technique sensitive to <1% oxygen vacancy variation, phase changes, and single switching cycle resolution, the first real‐time in operando nanoscale direct tracking of oxygen vacancy migration in 5 nm hafnium zirconium oxide during a pre‐wake‐up stage is provided. It is shown that the pre‐wake‐up leads to a structural phase change from monoclinic to orthorhombic phase, which further determines the device wake‐up. Further migration of oxygen ions in the phase changed material is then observed, producing device fatigue. These results provide a comprehensive explanation for the wake‐up and fatigue with Raman, photoluminescence and darkfield spectroscopy, combined with density functional theory and finite‐difference time‐domain simulations.
Funder
Engineering and Physical Sciences Research Council
Samsung Advanced Institute of Technology
Royal Academy of Engineering
Cambridge Trust
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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