Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing-Reference-Cited by-同舟云学术

Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

Published:2007-03 Issue:3 Volume:204 Page:881-886
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Hong Hyun-Gi,Kim S.-S.,Kim D.-Y.,Lee Takhee,Kim Kyoung-Kook,Song June-O.,Cho J. H.,Seong Tae-Yeon

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Illumination with solid state lighting technology

2. Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

3. Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

4. Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes

5. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

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