P‐5.2: Aqueous Sr‐doped In 2 O 3 TFT stability under negative bias illumination stress-Reference-Cited by-同舟云学术

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P‐5.2: Aqueous Sr‐doped In 2 O 3 TFT stability under negative bias illumination stress

Published:2019-09 Issue:S1 Volume:50 Page:728-731
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Zhou Youhang¹,Li Jun¹²,Yang Yaohua¹,Li Xifeng²,Zhang Jianhua²

Affiliation:

1. School of Material Science and EngineeringShanghai University Jiading Shanghai China

2. Key Laboratory of Advanced Display and System Applications, Ministry of EducationShanghai University Shanghai China

Funder

National Natural Science Foundation of China

Shanghai Minhang Science and Technology Commission

National Basic Research Program of China

Science and Technology Commission of Shanghai Municipality

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13625

Reference15 articles.

1. Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

2. Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors

3. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

4. Gate-bias stress in amorphous oxide semiconductors thin-film transistors

5. Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination

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1. Heterojunction channel engineering for enhanced mobility and stability of solution-processed holmium-doped indium oxide thin film transistors;Materials Science in Semiconductor Processing;2024-12

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