Precursors for p‐Type Nickel Oxide: Atmospheric‐Pressure Metal–Organic Chemical‐Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions
Author:
Affiliation:
1. Department of Chemistry University of Bath BA2 7AY Bath UK
2. Department of Chemistry University of Liverpool L69 7ZF Liverpool UK
Funder
Engineering and Physical Sciences Research Council
Publisher
Wiley
Subject
Inorganic Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/ejic.201601419
Reference87 articles.
1. Recent Developments in p-Type Oxide Semiconductor Materials and Devices
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3. p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells
4. Thermoelectric Behavior of Nickel Oxide
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