Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality-Reference-Cited by-同舟云学术

Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

Published:2015-01-26 Issue:5 Volume:212 Page:1091-1098
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Greco Giuseppe¹,Iucolano Ferdinando²,Bongiorno Corrado¹,Di Franco Salvatore¹,Lo Nigro Raffaella¹,Giannazzo Filippo¹,Prystawko Pawel³⁴,Kruszewski Piotr³⁴,Krysko Marcin³⁴,Grzanka Ewa³⁴,Leszczynski Michał³⁴,Tudisco Cristina⁵,Condorelli Guglielmo Guido⁵,Roccaforte Fabrizio¹

Affiliation:

1. CNR-IMM; Strada VIII, n. 5 - Zona Industriale 95121 Catania Italy

2. STMicroelectronics; Stradale Primosole 50 95121 Catania Italy

3. Institute of High Pressure Physics - PAS; Sokołowska 29/37 01142 Warsaw Poland

4. TopPGaN Ltd.; Sokołowska 29/37 01142 Warsaw Poland

5. Dipartimento di Scienze Chimiche; Università di Catania; viale Andrea Doria n. 5 95125 Catania Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431636/fullpdf

Reference50 articles.

1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

2. Wide band-gap power semiconductor devices

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