Unusual Polarization Dependence of Dislocation‐Related Luminescence in n‐GaN-Reference-Cited by-同舟云学术

Unusual Polarization Dependence of Dislocation‐Related Luminescence in n‐GaN

Published:2019-07-16 Issue:17 Volume:216 Page:1900305
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Medvedev Oleg¹²,Albrecht Martin³,Vyvenko Oleg¹^ORCID

Affiliation:

1. Faculty of PhysicsSt. Petersburg State University Ulyanovskaya 1 198504 St. Petersburg Russia

2. IRC NanotechnologySt. Petersburg State University Research Park, Ulyanovskaya 1 198504 St. Petersburg Russia

3. Department of Simulation & CharacterizationLeibniz‐Institut für Kristallzüchtung Max-Born-Straße 2 12489 Berlin Germany

Funder

Saint Petersburg State University

Deutsche Forschungsgemeinschaft

Deutscher Akademischer Austauschdienst

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900305

Reference16 articles.

1. Crystal Lattice Defects as Natural Light Emitting Nanostructures in Semiconductors

2. Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

3. Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

4. Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

5. Thermal stability of DRL in n‐GaN

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