Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy

Published:2011-11-24 Issue:1 Volume:209 Page:95-99
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chai Jessica H.,Song Young-Wook,Reeves Roger J.,Durbin Steven M.

Funder

MacDiarmid Institute for Advanced Materials and Nanotechnology, and technical support from Gary Turner and Helen Devereux

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201100153/fullpdf

Reference41 articles.

1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2. Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

3. Sulfur passivation of InN surface electron accumulation

4. Effects of (NH4)2Sx treatment on indium nitride surfaces

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