Semipolar (112¯2) GaN Films Improved by in situ SiN x Pretreatment of m‐Sapphire Substrate Surface-Reference-Cited by-同舟云学术

Semipolar (112¯2) GaN Films Improved by in situ SiN x Pretreatment of m‐Sapphire Substrate Surface

Published:2019-03-07 Issue:7 Volume:216 Page:1900001
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wu Zhengyuan¹²,Jiang Zhuoxun¹,Lu Shiqiang²,Li Jinchai²,Liu Ran¹,Kang Junyong²,Fang Zhilai¹

Affiliation:

1. Engineering Research Center of Advanced Lighting TechnologyMinistry of EducationAcademy for Engineering TechnologyFudan UniversityShanghai200433China

2. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesDepartment of PhysicsXiamen UniversityXiamen361005China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900001

Reference25 articles.

1. Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

2. Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique

3. Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes

4. Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes

5. Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates

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