Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures

Published:2016-02-03 Issue:5 Volume:213 Page:1145-1149
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Macherzyński Wojciech¹,Stafiniak Andrzej¹,Paszkiewicz Bogdan¹,Gryglewicz Jacek¹,Paszkiewicz Regina¹

Affiliation:

1. Faculty of Microsystem Electronics and Photonics; Wrocław University of Technology; Janiszewskiego str. 11/17 50 372 Wrocław Poland

Funder

European Union within European Regional Development Fund

National Science Center

Applied Research Program

LIDER

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

2. III-V Nitride based piezoresistive microcantilever for sensing applications

3. Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

5. Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

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