Applicability of an economic diode laser emitting at 980 nm for preparation of polycrystalline silicon thin film solar cells on glass-Reference-Cited by-同舟云学术

Applicability of an economic diode laser emitting at 980 nm for preparation of polycrystalline silicon thin film solar cells on glass

Published:2017-07-18 Issue:10 Volume:214 Page:1600882
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Plentz Jonathan¹,Schmidt Thomas¹,Gawlik Annett¹,Bergmann Joachim¹,Andrä Gudrun¹,Hauschild Dirk²,Lissotschenko Vitalij²

Affiliation:

1. Leibniz Institute of Photonic Technology (IPHT); Albert-Einstein-Str. 9 07745 Jena Germany

2. LIMO Lissotschenko Mikrooptik GmbH; Bookenburgweg 4-8 44319 Dortmund Germany

Funder

Bundesministerium für Wirtschaft und Energie

Thuringian Ministry for Economic Affairs, Science and Digital Society

European Commission

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Multicrystalline silicon thin film solar cells on glass with epitaxially grown emitter prepared by a two-step laser crystallization process

2. Efficiency and stability enhancement of laser-crystallized polycrystalline silicon thin-film solar cells by laser firing of the absorber contacts

3. Liquid phase crystallized silicon on glass: Technology, material quality and back contacted heterojunction solar cells

4. Crystalline silicon on glass-interface passivation and absorber material quality

5. Multicrystalline silicon films with large grains on glass: preparation and applications

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