Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers-Reference-Cited by-同舟云学术

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Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers

Published:2013-08-19 Issue:11 Volume:210 Page:2409-2415
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tangi Malleswararao¹,De Arpan¹,Shivaprasad S. M.¹

Affiliation:

1. Jawaharlal Nehru Centre for Advanced Scientific Research; Jakkur Bangalore 560064 India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329345/fullpdf

Reference29 articles.

1. When group-III nitrides go infrared: New properties and perspectives

2. InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

3. Effects of the narrow band gap on the properties of InN

4. Transient electron transport in wurtzite GaN, InN, and AlN

5. Origin of the n-type conductivity of InN: The role of positively charged dislocations

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