New approach for measuring migration properties of point defects in amorphous oxides-Reference-Cited by-同舟云学术

New approach for measuring migration properties of point defects in amorphous oxides

Published:2014-06-02 Issue:9 Volume:211 Page:2177-2183
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Dikarov Ekaterina¹,Shklyar Roman¹,Blank Aharon¹

Affiliation:

1. Schulich Faculty of Chemistry; Technion - Israel Institute of Technology; Haifa 32000 Israel

Funder

German-Israeli Foundation

Israel Science Foundation

European Research Council

Russell Berrie Nanotechnology Institute at the Technion

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431126/fullpdf

Reference27 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2. Point Defects in Oxides: Tailoring Materials Through Defect Engineering

3. Defects in Microelectronic Materials and Devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radical polymerization of radical-labeled monomers: The triarylmethyl-based radical monomer as an example;Journal of Polymer Science Part A: Polymer Chemistry;2018-10-18

2. Freestanding NiFe Oxyfluoride Holey Film with Ultrahigh Volumetric Capacitance for Flexible Asymmetric Supercapacitors;Small;2017-11-14

3. Recent trends in high spin sensitivity magnetic resonance;Journal of Magnetic Resonance;2017-07

4. EPR Microscopy;eMagRes;2017-03-19