High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates-Reference-Cited by-同舟云学术

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Published:2017-01-17 Issue:4 Volume:214 Page:1600436
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Dagher R.¹,Matta S.¹,Parret R.²,Paillet M.²,Jouault B.²,Nguyen L.¹,Portail M.¹,Zielinski M.³,Chassagne T.³,Tanaka S.⁴,Brault J.¹,Cordier Y.¹,Michon A.¹

Affiliation:

1. Université Côte d'Azur; CNRS, CRHEA (UPR10) France

2. Laboratoire Charles Coulomb - CNRS/Université de Montpellier; Pl. Eugène Bataillon; 34095 Montpellier France

3. NOVASiC; Savoie Technolac; Arche Bat 4, BP267 73375 Le Bourget du Lac France

4. Department of Applied Quantum Physics and Nuclear Engineering; Kyushu University; 744 Motooka, Nishi-ku Fukuoka 819-0395 Japan

Funder

French National Research Agency

NANOGANUV

FLAG-ERA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

2. Single-crystal aluminum nitride nanomechanical resonators

3. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

5. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

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