The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content-Reference-Cited by-同舟云学术

The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content

Published:2016-03-10 Issue:8 Volume:213 Page:2223-2228
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li X.¹,Zhao D. G.¹,Jiang D. S.¹,Chen P.¹,Liu Z. S.¹,Zhu J. J.¹,Yang J.¹,Liu W.¹,He X. G.¹,Li X. J.¹,Liang F.¹,Zhang L. Q.²,Liu J. P.²,Yang H.²

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors; Chinese Academy of Sciences; No. A35, Qinghua East Road, Haidian District Beijing 100083 P.R. China

2. Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics; Chinese Academy of Sciences; No. 398, Ruoshui Road, Suzhou Industrial Park Suzhou 215123 P.R. China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Basic Research Project of Jiangsu Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600013/fullpdf

Reference29 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

3. InGaN tapered laser diodes

4. Investigation of violet InGaN laser diodes with normal and reversed polarizations

5. Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation

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