Metal-insulator-silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating-Reference-Cited by-同舟云学术

Metal-insulator-silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating

Published:2013-09-12 Issue:11 Volume:210 Page:2510-2514
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kim Hyunjin¹,Bae Joonho²

Affiliation:

1. Division of Engineering and Department of Physics; Brown University; Providence RI 02912 USA

2. Department of Nano-Physics; Gachon University; Seongnam-si Gyeonggi-do 461-701 South Korea

Funder

Gachon University Research Fund of 2013

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329323/fullpdf

Reference24 articles.

1. Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics

2. Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures

3. Antireflection sub-wavelength gratings fabricated by spin-coating replication

4. Black nonreflecting silicon surfaces for solar cells

5. 100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

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