Research Toward a Heterogeneously Integrated InGaN Laser on Silicon-Reference-Cited by-同舟云学术

Research Toward a Heterogeneously Integrated InGaN Laser on Silicon

Published:2019-12-29 Issue:7 Volume:217 Page:1900770
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kamei Toshihiro¹²^ORCID,Kamikawa Takeshi¹,Araki Masahiro¹,DenBaars Steven P.¹,Nakamura Shuji¹,Bowers John E.¹

Affiliation:

1. Department of Electrical and Computer Engineering University of California Santa Barbara CA 93106-9560 USA

2. Electronics and Photonics Research Institute National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Umezono Tsukuba Ibaraki 305-8568 Japan

Funder

National Science Foundation

Kavli Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900770

Reference34 articles.

1. The Past, Present, and Future of Silicon Photonics

2. Heterogeneously Integrated InP\/Silicon Photonics: Fabricating Fully Functional Transceivers

3. Silicon optical modulators

4. High-performance Ge-on-Si photodetectors

5. Compact Focusing Grating Couplers for Silicon-on-Insulator Integrated Circuits

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