Influence of PE-ALD of GaP on the Silicon Wafers Quality-Reference-Cited by-同舟云学术

Influence of PE-ALD of GaP on the Silicon Wafers Quality

Published:2017-10-09 Issue:12 Volume:214 Page:1700685
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Baranov Artem I.¹²,Gudovskikh Alexander S.¹³,Kudryashov Dmitriy A.¹,Morozov Ivan A.¹,Mozharov Alexey M.¹,Nikitina Ekaterina V.¹,Zelentsov Kirill S.¹,Darga Arouna²,Le Gall Sylvain²,Kleider Jean-Paul²

Affiliation:

1. Saint-Petersburg National Research Academic University RAS; 194021 Saint-Petersburg Russia

2. GeePs, Group of Electrical Engineering − Paris, CNRS, CentraleSupélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités; UPMC Univ Paris 06 91192 Gif-sur-Yvette Cedex France

3. Saint-Petersburg Electrotechnical University “LETI”; 197376 Saint-Petersburg Russia

Funder

Russian Foundation for Basic Research

Conseil National de la Recherche Scientifique

French government and Campus France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Solar cell efficiency tables (version 46)

2. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

3. MBE growth of GaP on a Si substrate

4. Abrupt GaP/Si hetero-interface using bistepped Si buffer

5. Nature of the fundamental band gap in GaNxP1−x alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon;physica status solidi (a);2019-11-08

2. Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD;physica status solidi (a);2018-12-18