Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates-Reference-Cited by-同舟云学术

Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates

Published:2013-06-03 Issue:9 Volume:210 Page:1828-1831
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jiang Tingting¹,Yu Xuegong¹,Gu Xin¹,Rozgonyi George²,Yang Deren¹

Affiliation:

1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering; Zhejiang University; Hangzhou 310027 P. R. China

2. Department of Materials Science and Engineering; North Carolina State University; Raleigh North Carolina 27695 USA

Funder

National Natural Science Foundation of China

National Key Technology R&D Program

Innovation Team Project of Zhejiang Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329252/fullpdf

Reference17 articles.

1. Grain Boundaries in Polycrystalline Silicon

2. The bonded unipolar silicon‐silicon junction

3. The dc voltage dependence of semiconductor grain‐boundary resistance

4. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

5. Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaics

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1. Annealing effects on recombinative activity of nickel at direct silicon bonded interface;AIP Advances;2015-09

2. Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography;Progress in Photovoltaics: Research and Applications;2015-05-08