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Emerging Semiconducting Oxides

Published:2014-01 Issue:1 Volume:211 Page:19-20
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Bierwagen Oliver¹,Fischer Saskia F.²

Affiliation:

1. Paul-Drude-Insitut für Festkörperelektronik; Berlin Germany

2. Humboldt-Universität zu Berlin; Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Development of gallium oxide power devices

2. Reactively magnetron sputtered Bi2 O3 thin films: Analysis of structure, optoelectronic, interface, and photovoltaic properties

3. Growth, characterization, and properties of bulk SnO2single crystals

4. Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

5. Control of the conductivity of Si-doped β-Ga2 O3 thin films via growth temperature and pressure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The X-ray photoelectron spectroscopy and high-temperature structural studies of Zn1−xNixO/NiO two-phase composites;physica status solidi (b);2015-07-20

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