Power diamond vertical Schottky barrier diode with 10 A forward current-Reference-Cited by-同舟云学术

Power diamond vertical Schottky barrier diode with 10 A forward current

Published:2015-07-07 Issue:11 Volume:212 Page:2621-2627
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tarelkin Sergey¹²,Bormashov Vitaly¹,Buga Sergei¹³,Volkov Alexander¹,Teteruk Dmitry¹,Kornilov Nikolay¹,Kuznetsov Mikhail¹,Terentiev Sergey¹,Golovanov Anton¹³,Blank Vladimir¹²³

Affiliation:

1. Technological Institute for Superhard and Novel Carbon Materials; 7a Centralnaya Str. 142190 Troitsk Moscow Russia

2. National University of Science and Technology MISiS; Leninsky Ave. 4 119049 Moscow Russia

3. Moscow Institute of Physics and Technology; 9 Institutskii Per 141700 Dolgoprudny Moscow Russia

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532213/fullpdf

Reference29 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Electron and hole drift velocity in chemical vapor deposition diamond

3. Thermal conductivity of isotopically modified single crystal diamond

4. Device properties of homoepitaxially grown diamond

5. Extreme dielectric strength in boron doped homoepitaxial diamond

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hall effect analysis of boron and nitrogen background concentration in undoped CVD diamond;Applied Physics Letters;2024-07-22

2. Peculiarities of current transport in boron-doped diamond Schottky diodes with hysteresis in current–voltage characteristics;Diamond and Related Materials;2024-03

3. Diamonds in the Current: Navigating Challenges for the Integration of Diamond in Power Electronics;physica status solidi (a);2024-02-29

4. High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure;Chinese Physics B;2023-07-01

5. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective;Journal of Physics D: Applied Physics;2023-02-16