Reducing forward voltage and enhancing output performance of InGaN-based blue light-emitting diodes using metal dot-embedded transparent p-type finger-Reference-Cited by-同舟云学术

Reducing forward voltage and enhancing output performance of InGaN-based blue light-emitting diodes using metal dot-embedded transparent p-type finger

Published:2017-03-09 Issue:8 Volume:214 Page:1600792
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lee Jeeyun¹,Kim Dae-Hyun¹,Kim Ki-Seok²,Seong Tae-Yeon¹²³

Affiliation:

1. Department of Nanophotonics; Korea University; Seoul 02841 Korea

2. ResearchInstitute of Engineering and Technology; Korea University; Seoul 02841 Korea

3. Department of Materials Science and Engineering; Korea University; Seoul 02841 Korea

Funder

LED Biz division of LG Innotek Co

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600792/fullpdf

Reference33 articles.

1. Illumination with solid state lighting technology

2. Application of Field Emission as Backlight Unit for Liquid Crystal Displays

3. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

4. GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography

5. Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

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