A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology-Reference-Cited by-同舟云学术

A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

Published:2016-01-20 Issue:2 Volume:213 Page:289-301
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Puglisi Francesco Maria¹,Deleruyelle Damien²,Portal Jean-Michel²,Pavan Paolo¹,Larcher Luca³⁴

Affiliation:

1. DIEF; Università di Modena e Reggio Emilia; Via P. Vivarelli 10/1 41125 Modena Italy

2. IM2NP; UMR CNRS 7334; Aix-Marseille Université; Technopôle de Château Gombert; 35 rue Enrico Fermi 13453 Marseille Cedex 13 France

3. DISMI; Università di Modena e Reggio Emilia; Via Amendola 2 42122 Reggio Emilia Italy

4. MDLab s.r.l.; Località Grand Chemin 30; Aosta Valley 11020 Saint-Christophe Italy

Funder

ANR-DIPMEM

ANR-REFLEX

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532828/fullpdf

Reference72 articles.

1. A. Kawahara R. Azuma Y. Ikeda K. Kawai Y. Katoh K. Tanabe T. Nakamura Y. Sumimoto N. Yamada N. Nakai S. Sakamoto Y. Hayakawa K. Tsuji S. Yoneda A. Himeno K. Origasa K. Shimakawa T. Takagi T. Mikawa K. Aono 2012 432 434

2. K. Prall N. Ramaswamy W. Kinney K. Holtzclaw 2012 1 5

3. L. Baldi G. Sandhu 2013 30 36

4. Metal oxide resistive memory switching mechanism based on conductive filament properties

5. Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

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