Numerical Simulation on Thickness Dependency and Bias Stress Test of Ultrathin IGZO Thin‐Film Transistors Via a Solution Process-Reference-Cited by-同舟云学术

Numerical Simulation on Thickness Dependency and Bias Stress Test of Ultrathin IGZO Thin‐Film Transistors Via a Solution Process

Published:2019-03-18 Issue:7 Volume:216 Page:1800987
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Labed Mohamed¹,Sengouga Nouredine¹,Kim Kyung Hwan²,Rim You Seung³^ORCID

Affiliation:

1. Laboratory of Metallic and Semiconducting MaterialsUniversity of BiskraBiskra07000Algeria

2. Department of Electrical EngineeringGachon UniversitySeongnam461‐701Republic of Korea

3. School of Intelligent Mechatronics EngineeringSejong UniversitySeoul05006Republic of Korea

Funder

Ministry of Education

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800987

Reference38 articles.

1. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

2. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

3. A study on the microstructural and chemical evolution of In–Ga–Zn–O sol–gel films and the effects on the electrical properties

4. High-resolution soft x-ray spectroscopic study on amorphous gallium indium zinc oxide thin films

5. Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

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