A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching-Reference-Cited by-同舟云学术

A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching

Published:2018-03-01 Issue:9 Volume:215 Page:1700658
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Bouchilaoun Meriem¹^ORCID,Soltani Ali¹,Chakroun Ahmed¹,Jaouad Abdelatif¹,Darnon Maxime¹,Boone François¹,Maher Hassan¹

Affiliation:

1. Laboratoire Nanotechnologies & Nanosystèmes (LN2) − CNRS UMI-3463 − Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke; 3000 Boulevard de l'Université Sherbrooke J1K0A5 QC Canada

Funder

Natural Sciences and Engineering Research Council of Canada

le Regroupement Québécois sur les Matériaux de Pointe (RQMP)

NanoQuébec

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700658/fullpdf

Reference35 articles.

1. The preparation, characterization and applications of silicon nitride thin films

2. Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

3. Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon

4. Formation and Characterization of DNA Microarrays at Silicon Nitride Substrates

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1. In Situ Ambient Pressure Photoelectron Spectroscopy Study of the Plasma–Surface Interaction on Metal Foils;Langmuir;2024-06-25

2. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05

3. Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated SiN Films Using HF/H₂ and CF₄/H₂ Plasmas;ACS Applied Electronic Materials;2023-12-12

4. Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma;Vacuum;2023-04

5. An Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated Sin Films Using Hf/H2 and Cf4/H2 Plasmas;2023