Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors-Reference-Cited by-同舟云学术

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

Published:2017-02-07 Issue:3 Volume:214 Page:1600582
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Arikata Suguru¹,Kyono Takashi¹,Miura Kouhei²,Balasekaran Sundararajan²,Inada Hiroshi²,Iguchi Yasuhiro²,Sakai Michito³,Katayama Haruyoshi⁴,Kimata Masafumi⁵,Akita Katsushi⁶

Affiliation:

1. Semiconductor Technologies Laboratory; Sumitomo Electric Industries, LTD.; 1-1-1 Koyakita Itami Hyogo 664-0016 Japan

2. Transmission Devices Laboratory; Sumitomo Electric Industries, LTD.; 1 Taya-cho Sakae-ku Yokohama 244-8588 Japan

3. Sensor System Research Group; Japan Aerospace Exploration Agency (JAXA); 2-1-1 Sengen Tsukuba Ibaraki 305-8505 Japan

4. Space Technology Directorate I; Japan Aerospace Exploration Agency (JAXA); 2-1-1 Sengen Tsukuba Ibaraki 305-8505 Japan

5. College of Science and Engineering; Ritsumeikan University; 1-1-1 Noji-higashi Kusatsu Shiga 525-8577 Japan

6. Sumiden Semiconductor Materials, LTD.; 1-9-2 Takatsukadai Nishi-ku, Kobe-shi Hyogo 651-2201 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Proposal for strained type II superlattice infrared detectors

2. Two-dimensional electronic structure in InAs-GaSb superlattices

3. High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

4. Exploring optimum growth for high quality InAs/GaSb type-II superlattices

5. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

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4. Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition;Journal of Crystal Growth;2018-11

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