Structural, optical and electrical properties of Sb doped and undoped AgIn1 − xGaxSe2and Ag(InGa)5Se8thin films-Reference-Cited by-同舟云学术

Structural, optical and electrical properties of Sb doped and undoped AgIn1 − xGaxSe2and Ag(InGa)5Se8thin films

Published:2013-12-19 Issue:3 Volume:211 Page:714-722
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jacob Rajani¹,Remillard Stephen K.²,DeYoung Paul A.²,Deshpande Uday P.³,Shripathi T.³,Ganesan V.³,Naduvath Johns⁴,Sreenivasan P. V.¹,Philip Rachel Reena¹

Affiliation:

1. Thin Film Research Laboratory; Union Christian College; Aluva Kerala India

2. Department of Physics; Hope College; Holland MI 49423 USA

3. UGC-DAE CSR; Khandwa Road; Indore-452 001, MP India

4. Department of Metallurgical Engineering and Materials Science; Indian Institute of Technology Bombay; Mumbai-400076 India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Improved yield of Bridgman grown AgGaSe2 crystals using shaped crucibles

2. Annealing experiments on silver gallium selenide crystals

3. Growth and characterization of AgGaSe2 crystals

4. Phase-matched crystal growth of AgGaSe2 and AgGa1−xInxSe2

5. Characterization of p-AgGaSe2/n-CdS thin film heterojunction

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