Review of ferroelectric field‐effect transistors for three‐dimensional storage applications-Reference-Cited by-同舟云学术

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Published:2021-01-15 Issue:6 Volume:2 Page:1187-1207
ISSN:2688-4011
Container-title:Nano Select
language:en
Short-container-title:Nano Select

Author:

Park Hyeon Woo¹,Lee Jae‐Gil²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea

2. SK hynix Inc. Icheon Gyeonggi‐do 17336 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/nano.202000281

Reference88 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

3. Review and perspective on ferroelectric HfO2-based thin films for memory applications

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