Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution-Reference-Cited by-同舟云学术

Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution

Published:2022-03-08 Issue:13 Volume:9 Page:2105958
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

He Xinyi¹,Zhang Haoyun¹,Nose Takumi¹,Katase Takayoshi¹^ORCID,Tadano Terumasa²,Ide Keisuke¹,Ueda Shigenori³⁴⁵^ORCID,Hiramatsu Hidenori¹⁶,Hosono Hideo⁶,Kamiya Toshio¹⁶

Affiliation:

1. Laboratory for Materials and Structures, Institute of Innovative Research Tokyo Institute of Technology 4259 Nagatsuta, Midori Yokohama 226‐8503 Japan

2. Research Center for Magnetic and Spintronic Materials National Institute for Materials Science 1‐2‐1 Sengen Tsukuba Ibaraki 305‐0047 Japan

3. Research Center for Functional Materials National Institute for Materials Science Namiki Tsukuba 305‐0044 Japan

4. Research Center for Advanced Measurement and Characterization National Institute for Materials Science Tsukuba 305‐0047 Japan

5. Synchrotron X‐ray Station at SPring‐8 National Institute for Materials Science 1‐1‐1 Sayo Hyogo 679‐5148 Japan

6. Materials Research Center for Element Strategy Tokyo Institute of Technology 4259 Nagatsuta, Midori Yokohama 226‐8503 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202105958

Reference38 articles.

1. Complex thermoelectric materials

2. Rationally Designing High-Performance Bulk Thermoelectric Materials

3. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

4. Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors

5. Brush plating of tin(II) selenide thin films

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