Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes-Reference-Cited by-同舟云学术

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Published:2020-09-27 Issue:21 Volume:7 Page:2000917
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Liu Fang¹^ORCID,Yu Ye²,Zhang Yuantao²,Rong Xin¹,Wang Tao³,Zheng Xiantong¹,Sheng Bowen¹,Yang Liuyun¹,Wei Jiaqi¹,Wang Xuepeng²,Li Xianbin²,Yang Xuelin¹,Xu Fujun¹,Qin Zhixin¹,Zhang Zhaohui¹,Shen Bo¹⁴,Wang Xinqiang¹⁴^ORCID

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 P. R. China

2. State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China

3. Electron Microscopy Laboratory School of Physics Peking University Beijing 100871 P. R. China

4. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

Funder

Science Challenge Project

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202000917

Reference52 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films

3. Microstructures of GaN Thin Films Grown on Graphene Layers

4. Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

5. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanical peeling characteristics of large-scale high-crystallinity hBN films;Applied Surface Science;2024-09

2. Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective;APL Materials;2024-08-01

3. High performance few-layered h-BN-based MIS blocks by Fowler-Nordheim tunneling for infrared photodetection;Infrared Physics & Technology;2024-03

4. Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes;Materials;2023-11-17

5. Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode;Small;2023-10-06