Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically‐Thin Tungsten Disulfides-Reference-Cited by-同舟云学术

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically‐Thin Tungsten Disulfides

Published:2022-11-29 Issue:3 Volume:10 Page:2205638
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Wang Qun¹,Wang Shi²,Li Jingyi¹,Gan Yichen¹,Jin Mengtian¹,Shi Run¹,Amini Abbas³,Wang Ning²,Cheng Chun¹⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen 518055 P. R. China

2. Department of Physics and Center for Quantum Materials Hong Kong University of Science and Technology Hong Kong P. R. China

3. Center for Infrastructure Engineering Western Sydney University Kingswood New South Wales 2751 Australia

4. Guangdong Provincial Key Laboratory of Energy Materials for Electric Power Southern University of Science and Technology Shenzhen 518055 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202205638

Reference61 articles.

1. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

2. Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

3. Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

4. Electrical Transport Properties of Single-Layer WS2

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