Selective Electron Beam Patterning of Oxygen‐Doped WSe <sub>2</sub> for Seamless Lateral Junction Transistors-Reference-Cited by-同舟云学术

Selective Electron Beam Patterning of Oxygen‐Doped WSe ₂ for Seamless Lateral Junction Transistors

Published:2022-07-19 Issue:26 Volume:9 Page:2202465
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Ngo Tien Dat¹,Choi Min Sup¹,Lee Myeongjin¹,Ali Fida¹,Hassan Yasir¹,Ali Nasir¹,Liu Song²,Lee Changgu¹³,Hone James²,Yoo Won Jong¹^ORCID

Affiliation:

1. SKKU Advanced Institute of Nano Technology Sungkyunkwan University Suwon Gyeonggi‐do 16419 Korea

2. Department of Mechanical Engineering Columbia University New York NY10027 USA

3. School of Mechanical Engineering Sungkyunkwan University SuwonGyeonggi‐do16419 South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202202465

Reference57 articles.

1. High Performance Multilayer MoS2 Transistors with Scandium Contacts

2. Contact engineering for 2D materials and devices

3. Control of the Schottky Barrier and Contact Resistance at Metal–WSe 2 Interfaces by Polymeric Doping

4. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

5. Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

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