In‐plane epitaxial growth of 2D CoSe‐WSe 2 metal‐semiconductor lateral heterostructures with improved WSe 2 transistors performance-Reference-Cited by-同舟云学术

In‐plane epitaxial growth of 2D CoSe‐WSe 2 metal‐semiconductor lateral heterostructures with improved WSe 2 transistors performance

Published:2020-09-27 Issue:2 Volume:3 Page:222-228
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Ma Huifang¹,Huang Kejing¹,Wu Ruixia¹,Zhang Zhengwei¹,Li Jia¹,Zhao Bei¹,Dai Chen¹,Huang Ziwei¹,Zhang Hongmei¹,Yang Xiangdong¹,Li Bo²^ORCID,Liu Yuan²,Duan Xiangfeng³,Duan Xidong¹^ORCID

Affiliation:

1. Hunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha China

2. Department of Applied Physics, School of Physics and Electronics Hunan University Changsha China

3. Department of Chemistry and Biochemistry University of California Los Angeles California USA

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12157

Reference54 articles.

1. Van der Waals heterostructures