Full band Monte Carlo simulation of AlInAsSb digital alloys-Reference-Cited by-同舟云学术

Full band Monte Carlo simulation of AlInAsSb digital alloys

Published:2020-03-27 Issue:6 Volume:2 Page:1236-1240
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Zheng Jiyuan¹^ORCID,Ahmed Sheikh Z.¹²,Yuan Yuan¹,Jones Andrew¹,Tan Yaohua³,Rockwell Ann K.⁴,March Stephen D.⁴,Bank Seth R.⁴,Ghosh Avik W.¹²,Campbell Joe C.¹

Affiliation:

1. Electrical and Computer Engineering Department University of Virginia Charlottesville Virginia USA

2. Department of Physics University of Virginia Charlottesville Virginia USA

3. Synopsys Inc Sunnyvale California USA

4. Microelectronics Research Center University of Texas Austin Texas USA

Funder

Army Research Office

Defense Advanced Research Projects Agency

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12112

Reference19 articles.

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3. MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm

4. Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

5. Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution

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