Surface analysis at the sidewalls of VLSI patterns—limitations and capabilities of spatially resolved Auger electron spectroscopy-Reference-Cited by-同舟云学术

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Surface analysis at the sidewalls of VLSI patterns—limitations and capabilities of spatially resolved Auger electron spectroscopy

Published:1991-07 Issue:8 Volume:17 Page:543-550
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Hösler W.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference32 articles.

1. Undercutting Phenomena in Al Plasma Etching

2. Plasma beam studies of Si and Al etching mechanisms

3. in VLSI Electronics, Vol. 8. Academic Press, Oriando (1984).

4. Controlled Film Formation during CCl4 Plasma Etching

5. Plasma Etching in Semiconductor Device Fabrication, Elsevier, Amsterdam (1985).

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing Measured Signal Intensity: Emission Angle, Incidence Angle and Surface Roughness;Springer Series in Surface Sciences;2012-06-01

2. Identification of artifacts in Auger electron spectroscopy due to surface topography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

3. Auger analysis of etch residues in submicrometer via holes using focused ion beam sample preparation;Surface and Interface Analysis;1995-02

4. Microanalytical Imaging with Auger Electrons;Microscopy Microanalysis Microstructures;1995

5. Recent progress in quantitative and high spatial resolution AES;Mikrochimica Acta;1994-12

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